ACKyushu writes "Researchers from Helsinki University of Technology (Finland), University of New South Wales (Australia), and University of Melbourne (Australia) have succeeded in building a working transistor whose active region comprises only a single phosphorus atom in silicon. The results have just been published in Nano Letters. The working principles of the device are based on sequential tunneling of single electrons between the phosphorus atom and the source and drain leads of the transistor. The tunneling can be suppressed or allowed by controlling the voltage on a nearby metal electrode with a width of a few tens of nanometers."
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