Cheap Metal-Insulator-Metal (MiM) Diode Created 137
An anonymous reader writes "Progress on metal-insulator-metal diode manufacturing was just reported online in the professional journal Advanced Materials (abstract). For the first time a high-performance 'metal-insulator-metal' diode was created with cheap materials. This is a fundamental discovery. It could change the way manufacturers produce electronic products at high speed, on a huge scale, and at a very low cost, even less than with conventional methods."
Re:Ground breaking (Score:3, Informative)
HP just developed an implementation in the last year.
It will take them a couple years to get a production line going, then a few more years before it starts showing up in products.
Re:Cheaper than silicon? (Score:4, Informative)
Re:Dooooood !! (Score:3, Informative)
A diode maintains a one way flow of current.
Re:Ground breaking (Score:5, Informative)
Whatever happened to memristors?
HP has partnered with Hynix to develop the manufacturing process and commercialize memristor products. Memristors used for storage will eventually appear as ReRAM (resistive RAM.) Meanwhile, other companies are working on memristor designs based on material other than TiO2 as is used by HP.
Would someone with a good grounding in semiconductors please elaborate on why MIM diodes are significant? I have a good handle on basic electronics but not enough experience to deduce how MIM diodes would improve circuit design.
How does this work? (Score:5, Informative)
One thing I did see is that this kind of diode can operate at 100's of THz frequencies, and that this enables nantennas. http://en.wikipedia.org/wiki/Nantenna [wikipedia.org] If these kind of MIM diodes can be made cheaply then a new cost effective class of solar power device may become feasible. So it could be a really big deal.
Re:Cheaper than silicon? (Score:5, Informative)
the most abundant element in the universe?
The most abundant element in the universe is Hydrogen. Silicon, while plentiful in raw form, must be purified, crystallized, doped, etc. for use in microelectronics. This is an expensive, energy intensive process with less than perfect yield. Copper and aluminum are vastly easier to deal with.
Re:Dooooood !! (Score:2, Informative)
Re:Ground breaking (Score:3, Informative)
Re:How does this work? (Score:3, Informative)
http://ir.library.oregonstate.edu/xmlui/bitstream/handle/1957/14352/cowellewilliam2010.pdf [oregonstate.edu]
Re:How does this work? (Score:4, Informative)
I found the patent [uspto.gov] for it. The background section has a pretty good looking writeup, and is not a PDF.
Re:Ugh... yet another paywall stopping innovation (Score:5, Informative)
As a published academic myself, I concur. I don't get a dime from my published articles so paywalls don't help me. I benefit from people hearing about, reading, being influenced by and eventually citing my work because those things lead to higher academic ratings which lead to better positions, grants, etc.
Re:Whats the catch? (Score:3, Informative)
When I hear electron tunneling I can't help but see oxide or whatever the hell these things are made of slowly being eaten away.
You need to look elsewhere [wikimedia.org].
Horrible horrible public science (Score:5, Informative)
I am a semiconductor scientist, but I completely fail to understand what this news is about. The article does nowhere mention the materials used, the device behavior, the application, the purpose or anything else.
A MIM device as is, is a capacitor. And that is exactly what the picture is showing. When this type of capacitor is scaled to the nanometer regime it starts to get leaky due to quantum mechanical tunneling through the dielectric. The abstract mentions 'controlled quantum mechanical tunneling'... Aha, this could be what it is about. But as long as metal electrodes are involved this will only create a nonlinear resistor. Still no idea what the exact purpose is.
Are nanoscale MIM capacitors new? No, not at all. Right now you have billions of them doing their job in your computers main memory. Depending on the vintage of your computer, these capacitors employ nanolaminates of ZrO2 and Al2O3 at a total thickness of 5 to 10 nanometers. Quantum electrical tunneling is of high relevance in these devices, since it leads to loss of stored information. So, is cheap new? A quick calculation suggests that the manufacturing cost of a single MIM device in a DRAM is approximately 10^(-10) US$.
Re:Ground breaking (Score:5, Informative)
Here's a paper [colorado.edu] that explains MiM theory, though it isn't about this development.
Re:Horrible horrible public science (Score:5, Informative)
I agree that the article could be a lot more informative. However, one can actually figure out quite a lot. For instance, since they call it a diode, it means the leaky capacitor you mention is asymmetric, and leaks more easily in one direction than the other. This is born out by the picture, which seems to show two layers of insulator, of different thickness, between the metal layers. And once you have electrical asymmetry, you can start building all sorts of interesting logic. But I agree they do not explain why tunneling through two layers A and B in the order "A then B" should be different from "B then A". Is it because of the direction of applied voltage, or are the insulator materials asymmetric at the molecular level, or is there some deep fact about quantum tunneling that makes it work? I would certainly have liked to see that covered.
Second, in terms of benefits, it seems this device would be far easier, simpler and cheaper to fabricate than a normal PN diode. In a PN diode, you essentially need to arrange a metal wire, a small P-doped semiconductor region, a small N-doped semiconductor region and another metal wire. In addition, the two semiconductor regions need to be insulated from their surroundings somehow. This all requires pretty careful alignment. It looks like the MiM diodes would be self-aligning, in the sense that you could just create a pattern of vertical metal wires on one layer, then overlay the two layers of insulator, followed by a layer of horizontal metal wires. The diodes would form at the points where the wires cross, without any precise alignment being needed. And the fact that the middle layers are insulators would mean no further insulation was necessary. One could probably fabricate giant sheets of these things very cheaply.
Finally, the fact that they can use these for rectifying infrared radiation implies they can operate many orders of magnitude faster than normal CMOS diodes.
Googling a little also hints that MiMs are better at extracting the full energy from incident photons in photovoltaic applications, which could be a useful side benefit, allowing one to efficiently convert optical or infrared radiation into DC current with a single type of device. But I'm just guessing, an expert would need to confirm that.
In summary, I agree this article could be a lot better. However, I have seen a lot worse, and it does seem to be alerting us to something which could turn out to be important.
Re:Ground breaking (Score:3, Informative)
It's a bit surprising to find out that some relatively unknown experimenters may have actually stumbled on tunnel-diode-like technology in the early days of radio over 80 years ago. I think they were officially invented by Sony in 1957, although most that I've seen in the U.S. came from G.E.
http://www.sony.co.jp/Products/SC-HP/outline/overview/history.html [sony.co.jp]
Perhaps some here have experimented with a homemade cat-whisker diode for a crystal radio.
As it turns out, making a little oscillator with a homemade metal-metal tunnel diode is easy enough that many here could do it. (a couple of variations using other materials are linked from the page below)
http://home.earthlink.net/~lenyr/ntype-nr.htm [earthlink.net]
I wish the story had made it clear just what sort of diode properties besides "cheaper" they were going for. It doesn't seem like they'd merge into current I.C. designs being of a much different process. The energy conversion thing is interesting, but that's much different than fast efficient diodes for switching power supplies or tunnel diodes for oscillators and high-frequency or pulse/trigger circuits. And it's a little hard to tell exactly how it ties in with LCD technology as that's pretty low frequency. Most digital I.C.s don't need or contain many diodes. They don't say anything about this helping to make better transistors. Normal diodes, even fast and cheap ones, usually can't replace transistors. And more unusual diodes with the negative-resistance effects of tunnel-diodes would certainly would not be a simple transplant into logic circuits. They've been well suited to a small niche of applications in the past.
I guess it is time to dig up the old Trek episode where Spock was on old Earth building electronics with a bunch of vacuum tubes...
Metal on Metal diodes are not new... (Score:2, Informative)
The appearance of them is as old as corroded copper wire.. What has changed is that some materials specialists have figured out how to characterize these so called "parasitic" diodes and fabricate them with predictable parameters. As others have pointed out they are quite useful as they can be fabricated in the metal layers above the doped silicon, thus removing this type of component from the die and placing it in the metallization layers where there is a lot more room.
Now basically, as I understand it, diodes do not take up 1/2 a transistor foot print on the substrate. "Free as in beer" diodes.... from a floor-planner's perspective.