Testing New Transistors In Space 54
Roland Piquepaille writes "Northwestern University researchers have developed new transistors which are currently tested on the International Space Station (ISS) to see how they react to cosmic radiation. These transistors, which are using a new kind of gate dielectric material called a self-assembled nanodielectric (SAND), are exposed to radiation outside the ISS since March 22, 2008, and will stay there for one year. According to the researchers, these new transistors could be used 'on long space missions since early experiments on Earth indicate that the transistors hold up well when exposed to radiation.'"
Re:University press releases (Score:3, Informative)
Some googling revealed the groups publication history. I still fail to spot the relevant publication.
http://chemgroups.northwestern.edu/marks/pubs.html [northwestern.edu]
The research focus of the group suggests that "SANDS" is an organic dielectric for thin film transitors - with either organic or transparent inorganic semiconductor channel. This kinds of transistors are still very much in research stage and have only found very limited commercial applications. The most probably use would be in displays.
We are talking about devices which are >3 orders of magnitude large and slower than those used in modern CPUs. The press release alludes to "intel CPUs", which could not be further off and is grossly misleading. This is a completely different application.